2 edition of Electron micropobe analysis of tantalum-nitride thin films found in the catalog.
Electron micropobe analysis of tantalum-nitride thin films
D. L Stoltz
1979 by Dept. of Energy, for sale by the National Technical Information Service] in [Washington], [Springfield, Va .
Written in English
|Statement||by D. L. Stoltz and J. P. Starkey|
|Series||BDX ; 613-1198 (Rev.)|
|Contributions||Bendix Corporation. Kansas City Division. Communications Services, United States. Dept. of Energy|
|The Physical Object|
|Pagination||18 leaves :|
|Number of Pages||18|
Free vibration of hexagonal panels simply supported at discrete points
The other side of the invisible fence
European Conference on Microcirculation: 21st Conference, Stockholm, June 2000
Software industry job descriptions.
Worker attitudes about health and safety in three asbestors brake manufacturing plants
The ecology and ultrastructure of marine manganese oxidizing bacteria
Selected works of Mao Tse-tung (translated from the Chinese).
Manifest of passengers arriving in the St. Albans, VT District through Canadian Pacific, and Atlantic Ports, 1895-1954
Its P. A. R. T. Y. Time!
The other side of longing
Get this from a library. Electron micropobe analysis of tantalum-nitride thin films. [D L Stoltz; Bendix Corporation. Kansas City Division.
Communications Services.; United States. Department of Energy.]. Measurement of electrical resistivity in the temperature range ≤T≤ K of tantalum nitride films prepared by Ion Beam Assisted deposition and pure tantalum films prepared by electron beam evaporation has been carried out.
The tantalum film shows a resistivity minimum at T m =12 K, whereas tantalum nitride shows a decrease in resistivity with an increase in by: 5.
Tantalum nitride (TaN) is a chemical compound, a nitride of are multiple phases of compounds, stoichimetrically from Ta 2 N to Ta 3 N 5 including TaN. As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the back end of line of computer chips.
Tantalum nitrides are also used in thin film ance: black crystals. Thin Solid Films, 57 () Elsevier Sequoia S.A., Lausanne--Printed in the Netherlands ELECTRICAL AND STRUCTURAL PROPERTIES OF TANTALUM NITRIDE THIN FILMS DEPOSITED BY SPUTTERING* R.
PETROVIC, T. NENADOVIC, N. KRALJEVIC AND T. DIMITRIJEVIC Boris Kidrie Institute of Nuclear Sciences, POBBelgrade (Yugoslavia) (Received Aug Cited by: Especially, a high-accuracy thin film resistor (TFR) needs to make a light, thin, short, and small product with a decrease of tolerance for electronic and optical device applications.
Tantalum nitride is a mechanically hard, chemically inner, and corrosion-resistant material and has good shock/heat resistance properties [ 47 - 50 ].Cited by: 3. Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: A factor analysis study of the Ta 4∈f XPS core level Article in Applied Physics A 81(7) High temperature thermal properties of thin tantalum nitride films Article in Applied Physics Letters 99(26) December with Reads How we measure 'reads'.
dose (~5x atoms/cm2), XRD analysis shows the presence of β-TaNγ-Ta2N, δ-TaN and ε-TaN phases. Raole et al have found that β-TaN, cubic TaN and hexagonal Ta5N6 phases are formed for low nitrogen ion doses, however, the hexagonal γ-Ta2N and TaN phases are only observed for higher ion doses.
The thickness of the tantalum nitride films grown by either of the above mentioned. High temperature thermal properties of thin tantalum nitride films Elah Bozorg-Grayeli,1,a) Zijian Li,1 Mehdi Asheghi,1 Gil Delgado,2 Alexander Pokrovsky,2 Matthew Panzer,2 Daniel Wack,2 and Kenneth E.
Goodson1 1Department of Mechanical Engineering, Stanford University, Stanford, CaliforniaUSA 2KLA-Tencor Corporation, Milpitas, CaliforniaUSA File Size: KB. Post-deposition rapid vacuum annealing of tantalum nitride (Ta 2 N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about − ppm/°C.
A subsequent aging study revealed degradation of the nichrome (NiCr) contact by: Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio frequency magnetron sputtering H. Nie, S. Xu, S. Wang, L. You, Z.
Yanga), C. Ong and J. Li Center for Superconducting and Magnetic Materials, Institute of Engineering Science and Department of.
The experimental thin film resistor chips (Figure 1) were prepared as follows: Firstly, the conductor silver material was printed on an aluminaTaN films with a thickness of about nm were deposited on the silver-printed substrate by DC sputtering with Ta target in the Ar/N 2 mixed gas ambient.
The sputtering power was fixed at a DC power of by: 3. Coatings of tantalum nitride with various compositions were deposited on silicon substrates using unbalanced reactive magnetron sputtering.
An optical emission spectrometer was used to monitor the ratio of tantalum to nitrogen particles in the plasma in real time. The coatings were characterized using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and Cited by: The thicknesses of these films are usually of the same order as the thermal energy carrier mean free path, which complicates the study of heat conduction.
This paper presents thermal (cross-plane) and electrical (in-plane) conductivity measurements on TaN films with thicknesses of 50, 75, and nm.
The properties of tantalum nitride (TaNx) thin films on silicon and low temperature co-fired ceramics based substrates were investigated with respect to their potential use for sensor elements operated under harsh environmental conditions.
For deposition reactive direct current magnetron sputtering was applied at constant back pressure (= Pa) and plasma power (=1, W).Cited by: Titanium nitride thin films have been prepared at different temperature of substrate by reactive DC magnetron sputtering. Crystal structure and surface morphology of the thin films were evaluated by XRD and AFM analysis.
With increased substrate temperature and latticeFile Size: 1MB. At lower N 2 gas flow, crystalline TaN thin films were obtained. Amorphous like TaN thin films were observed at other rate range using XRD.
Ta oxide layer was observed between the crystalline TaN film and both of Si wafer and glass substrates by GDS depth profiling. Film thickness was nm. The adhesion of Ta 2 N thin films - often used as thin film resistors - to sapphire substrates has been studied by continuous microindentation and microscratch techniques.
Ta 2 N films, μm in thickness, were sputter deposited onto single crystal substrates. Continuous microscratch experiments were performed by driving a conical diamond indenter simultaneously into and across the film Cited by: 2.
This study evaluates nm-thick amorphous Ta2N (a-Ta2N) thin films with various compositions and metallurgical designs as diffusion barriers for copper metallization. Results based on sheet resist Cited by: Thin films of Ta nitrides for electron diffraction study were prepared by nitriding thin evaporated films of tantalum in ammonia and nitrogen.
By heating thin films of Ta 3 N 5 in vacuum, the phase transformations occur successively as follows: Ta 3 N 5 →Ta 4 N 5 →Ta 5 N 6 →ε-TaN→Ta 2 N. The stucture of each nitride form is discussed. Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor Jill S.
Becker, Seigi Suh, Shenglong Wang, and Roy G. Gordon* as shown by X-ray diffraction and high-resolution transmission electron tantalum nitride, and tungsten nitride are currently the most intensively studied barrier. WINning with tantalum nitride.
Stephen Oxley, Senior Engineer, Applications and Marketing, TT Electronics. A production process developed by TT Electronics is bringing the high reliability benefits of tantalum nitride for thin film chip resistors to a wider range of. on AlN substrates for Π-type attenuator application J.
Electrochem. Soc. G–6  Cuong N D, Kim D-J, Kang B-D and Yoon S-G Structural and electrical characterization of tantalum nitride thin film resistors deposited on AlN substrates. The devices’ tantalum nitride resistive film assures a moisture resistance level that exceeds MIL-PRF limits by a factor of The E/H (Ta 2 N) thin film resistors offer very low noise of less than −25 dB and a low voltage coefficient of ppm/V.
Their wraparound terminations feature a tenacious adhesion layer covered with an. Tantalum nitride, Ta3N5, is one of the most promising materials for solar energy driven water oxidation. One significant challenge of this material is the high temperature and long duration of ammonolysis previously required to synthesize it, which has so far prevented the use of transparent conductive oxide In celebration of Kazunari Domen’s 65th birthday, Global Energy Challenges Cited by: Chemically enhanced physical vapor deposition of tantalum nitride-based ﬁlms for ultra-large-scale integrated devices Ning Li and D.
Ruzica) Plasma Material Interaction Group, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois, Urbana, Illinois R. Powell Novellus Systems, Inc., San Jose, California. Thin films of TiN can be deposited by a various physical (PVD) and chemical (CVD) vapor deposition methods including evaporation, ion plating and sputtering [1, 2 – 4].
The TiN material shows a sodium chloride (NaC1) lattice, with Ti atoms in a fcc arrangement and N atoms partly occupying the octahedral interstices, normally at very small. A tantalum-nitride thin-film resistor with a low-variability resistance was formed by optimizing the conditions for depositing a tantalum-nitride thin film.
The thin film was deposited by RF-magnetron-reactive sputtering, and nitrogen-pressure ratio, substrate temperature, and deposition rate in the conditions were optimized by measuring Author: Teruhisa Akashi.
A tantalum-nitride thin-film resistor with a low-variability resistance was formed by optimizing the conditions for depositing a tantalum-nitride thin film.
The thin film was deposited by RF-magnetron-reactive sputtering, and nitrogen-pressure ratio, substrate temperature, and deposition rate in the conditions were optimized by measuring. Improve film properties by more reactive 2nd reactant H•H,• +, and ion bombardment •Ar+ Plasma enhancement result in • High film density ( g/cm³) • Low oxygen content of.
Tantalum and tantalum nitride ﬁlms of about 50 nm thick-ness were deposited onto ~. Si substrates by using dc magnetron sputtering at various N2/Ar gas ratios.
Si wafers were cleaned in diluted HF solution and rinsed in deion-ized water before loading into the chamber. During deposi-tion, the operating pressure was maintained at TANTALUM NITRIDE MATERIAL SAFETY DATA SHEET SAFE HANDLING AND USE STEPS TO BE TAKEN IN CASE MATERIAL IS RELEASED OR SPILLED: Wear self-contained breathing apparatus and full protective clothing.
Isolate the area where the spill occurred and insure that proper ventilation is available and that water/moisture is kept out of the area. title = "Ab initio study of the stable phases of 1: 1 tantalum nitride", abstract = "Integrated circuits will continue to see dimensional shrinking and, as a consequence, the barrier layers needed to stop the diffusion of the metal interconnects into the dielectrics will also need to by: tantalum and molybdenum grown as thin ﬁlms by the atomic layer epitaxy method,” Thin Solid Films– ().
Aouadi and M. Debessai, “Optical properties of tantalum nitride ﬁlms fabricated using reactive unbalanced magnetron sputtering,” J. Vac. Sci. Technol. A File Size: 1MB. SUPPORTING INFORMATION Tantalum Nitride Films Integrated with Transparent Conductive Oxide Substrates via Atomic Layer Deposition for Photoelectrochemical Water Splitting Hamed Hajibabaei, Omid Zandi, Thomas W.
Hamann* Michigan State University, Department of Chemistry S Shaw Lane East Lansing, MichiganUnited States Figure S1. Animation & Cartoons Arts & Music Computers & Technology Cultural & Academic Films Ephemeral Films Movies News & Public Affairs.
Understanding 9/ Spirituality & Religion Sports Videos Television Videogame Videos Vlogs Youth Media. Full text of "Monthly catalog of. Thin Solid Films () er. com/locate/tsf. Deposition of tantalum nitride thin films by D.C. magnetron sputtering S.K.
Kim*, B.C. Cha School of Materials Science and Engineering, University of Ulsan, UlsanSouth Korea Available online 28 September Abstract Thin films of tantalum nitride (TaN) were deposited on SKD11 tool steel substrate by a D.C. magnetron. Institute of Semiconductors and Microsystems Atomic Layer Deposition of Tantalum Nitride based Films C.
Hoßbach, D. Seifert, H. Wojcik, M. Knaut, M. Albert, and J. Bartha Page 2 and 3: Introduction Subject of this talk.
Transmission electron microscopy (TEM) investigations performed on thin ( nm) and thick ( Î¼m) films revealed an () oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate.